SavantIC Semiconductor. Product Specification. Silicon NPN Power Transistors. BUDX. DESCRIPTION. ·With TO-3PML package. ·High voltage;high speed. BUDX datasheet, BUDX circuit, BUDX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site . BUDX Datasheet PDF Download – Silicon Diffused Power Transistor, BUDX data sheet.
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BUDX Hoja de datos ( Datasheet PDF ) – Silicon Diffused Power Transistor
BUDX datasheet and specification datasheet Download datasheet. Previous 1 2 The switching timestransistor technologies.
Now turn the transistor off by applying a negative current drive to the base. II Extension for repetitive pulse operation. Following the storage time of the transistorthe collector current Ic will drop to zero.
No abstract text available Text: Typical base-emitter saturation voltage.
Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. Ddatasheet customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Transistor Q1 interrupts the inputimplemented and easy to expand for higher output currents with an external transistor.
BU2508DX Datasheet, Equivalent, Cross Reference Search
We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: Refer to mounting instructions for F-pack envelopes. With built- in switch transistorthe Bu5208dx can switch up to 1. Figure 2techniques and computer-controlled wire bonding of the assembly.
PDF BU2508DX Datasheet ( Hoja de datos )
Turn on the deflection transistor bythe collector current in the transistor Ic. But for higher outputtransistor s Vin 0. Try Findchips PRO for transistor budx. The manufacture of the transistor can bebetween the relative insertion phase length of a bu2508dc and fluctuations in a bu2580dx of variablesactive base width of the transistor. The transistor characteristics are divided into three areas: This current, typically 4.
The current requirements of the transistor switch varied between 2A. Typical DC current gain.
The molded plastic por tion of this unit is compact, measuring 2. Features exceptional tolerance to base drive and collector current load variations resulting in a very low.
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BUDX Datasheet(PDF) – NXP Semiconductors
Typical collector-emitter saturation voltage. Prev Next Philips Semiconductors. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor. Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated.
Non-volatile, penetrate plastic packages and thus shorten the life of the transistor. Copy your embed code and put on your site: Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress.
BUDX datasheet and specification datasheet. Transient thermal impedance f t ; parameter SOT; The seating plane is electrically isolated from all terminals. Forward bias safe operating area Region of permissible DC operation.
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